AO7401 30v p-channel mosfet general description product summary v ds i d (at v gs =-10v) -1.4a r ds(on) (at v gs =-10v) < 115m w r ds(on) (at v gs =-4.5v) < 140m w r ds(on) (at v gs =-2.5v) < 200m w symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl maximum junction-to-ambient a maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 280 425 320 power dissipation b p d pulsed drain current c continuous drain current t a =25c w 0.35 t a =25c a i d -1.4 -1.0 -10 t a =70c t a =70c absolute maximum ratings t a =25c unless otherwise noted -30v drain-source voltage -30 the AO7401 uses advanced trench technology to provide excellent r ds(on) , low gate charge, and operation with gate voltages as low as 2.5v, in the small sot363 footprint. it can be used for a wide variety of applications, including load switching, low current inverters and low current dc-dc converters. v maximum units parameter v 12 gate-source voltage c/w r q ja 300 340 360 max 0.22 units parameter typ junction and storage temperature range -55 to 150 c thermal characteristics g ds sc-70 (sot-323) top view bottom view g d s g s d rev 6: june 2011 www.aosmd.com page 1 of 5
AO7401 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0.6 -1 -1.4 v i d(on) -10 a 92.5 115 t j =125c 130 160 110 140 m w 150 200 m w g fs 6 s v sd -0.78 -1 v i s -0.5 a c iss 260 315 pf c oss 37 pf c rss 20 pf r g 4 8 12 w q g (10v) 5.9 7.2 nc q g (4.5v) 2.8 3.5 nc q gs 0.7 nc q gd 1 nc t d(on) 6 ns t r 3.5 ns t d(off) 20 ns t f 5 ns t rr 11.5 15 ns q rr 4.5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-1.4a reverse transfer capacitance i f =-1.4a, di/dt=100a/ m s v gs =0v, v ds =-15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage v ds =v gs i d =-250 m a v ds =0v, v gs = 12v i s =-1a,v gs =0v v ds =-5v, i d =-1.4a v gs =-2.5v, i d =-1a v gs =-4.5v, i d =-1.2a r ds(on) static drain-source on-resistance m w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =-10v, v ds =-15v, i d =-1.4a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =-1.4a, di/dt=100a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =10 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedance from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. rev 6: june 2011 www.aosmd.com page 2 of 5
AO7401 typical electrical and thermal characteristics 17 52 10 0 18 40 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 4 -v gs (volts) figure 2: transfer characteristics (note e) -i d (a) 50 70 90 110 130 150 170 190 210 0 1 2 3 4 5 6 -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics (note e) -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =-4.5v i d =-1.2a v gs =-10v i d =-1.4a v gs =-2.5v i d =-1a 50 100 150 200 250 0 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-1.4a 25c 125c 0 3 6 9 12 15 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics (note e) -i d (a) v gs =-2v -2.5v -4.5v -6v -10v -3v v gs =-2.5v rev 6: june 2011 www.aosmd.com page 3 of 5
AO7401 typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 6 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 100 200 300 400 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =-15v i d =-1.4a 0 5 10 15 20 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =425c/w t on t p d rev 6: june 2011 www.aosmd.com page 4 of 5
AO7401 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev 6: june 2011 www.aosmd.com page 5 of 5
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